| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The SQ4917EY-T1_GE3 is a dual P-channel MOSFET array from Vishay Dale. It integrates two P-channel enhancement-mode transistors in a single 8-pin SOIC package for space-efficient switching applications.
This device features a minimum drain-source breakdown voltage of -60V at 0V gate-source. The gate-source threshold voltage is specified with a typical value of -2V and a range of -1.5V to -2.5V at a drain current of -250μA.
The 8SO package provides a compact solution for dual-channel load switching and power management circuits. With a drain current rating of 8A, it suits a variety of moderate-power applications.
The MOSFET array is categorized under discrete semiconductor products and specifically as a transistor array.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -60V at VGS=0V and ID=-250μA.
The gate-source threshold voltage is typically -2V, with a range of -1.5V to -2.5V at VDS=VGS and ID=-250μA.