| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76,020 pcs
|
76020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4850EY-T1_GE3 is an N-Channel power MOSFET featuring TrenchFET technology. It is rated for a 60V drain-source voltage and can handle a continuous drain current of 12A at 25°C, with a maximum power dissipation of 6.8W.
This MOSFET has a low on-resistance of 0.022 Ohms at VGS = 10V and 4.5V drive voltage. It operates over a wide temperature range of -55°C to 175°C.
The device is housed in an 8-SOIC package and is suitable for surface mounting. It is AEC-Q101 qualified, indicating its suitability for automotive applications. The part is also RoHS3 compliant and halogen-free.
Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and an input capacitance of 1250pF. The continuous source current is 6.2A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V minimum at VGS = 0, ID = 250 μA.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The continuous drain current is 12 A at TC = 25°C and 6.9 A at TC = 125°C.
The maximum on-resistance is 22 mOhm at VGS = 5V, ID = 6A, and 22 mOhm at VGS = 10V.
The maximum gate charge is 30 nC at VGS = 10V.
The device uses TrenchFET technology.