SQ4850CEY-T1_GE3 The Vishay Dale SQ4850CEY-T1_GE3 is an automotive-grade N-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 12A. It features a low on-resistance of 22mΩ at 10V gate-source voltage.
Mfr Part #:

SQ4850CEY-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ4850CEY-T1_GE3 is an automotive-grade N-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 12A. It features a low on-resistance of 22mΩ at 10V gate-source voltage.
✓ Total Stock: 83,520 pcs
$ Price Range: $2.56

SQ4850CEY-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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83,520 pcs
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SQ4850CEY-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ4850CEY-T1_GE3 Description

Short technical summary and product information.

This Vishay Dale SQ4850CEY-T1_GE3 is an N-Channel power MOSFET designed for automotive applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 12A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 22mΩ at 6A drain current and 10V gate-source voltage, and 31mΩ at Vgs = 4.5V.

 

Featuring TrenchFET® technology, this device is 100% Rg and UIS tested and AEC-Q101 qualified, ensuring high reliability for demanding automotive environments. It operates across a wide temperature range from -55°C to 175°C (TJ).

 

The SQ4850CEY-T1_GE3 comes in a standard 8-SOIC surface mount package, making it suitable for various PCB layouts. Its high power dissipation capability of 6.8W at 25°C case temperature and efficient thermal resistance ratings contribute to its robust performance.

SQ4850CEY-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ4850CEY-T1_GE3 N-Channel MOSFET
Subcategory: N-Channel

SQ4850CEY-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ4850CEY-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ4850CEY-T1_GE3 Features

  • Automotive N-Channel 60V MOSFET
  • Low Rds On: 22mΩ max @ 6A, 10V
  • High continuous drain current: 12A
  • AEC-Q101 qualified for reliability
  • Surface mount 8-SOIC package

SQ4850CEY-T1_GE3 Applications

  • Suitable for automotive power systems
  • Ideal for switching power applications
  • Used in high-reliability circuits
  • Efficient power management solutions

SQ4850CEY-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQ4850CEY-T1_GE3?

The maximum drain-source voltage (Vds) for the SQ4850CEY-T1_GE3 is 60 V.

What is the typical on-resistance of the SQ4850CEY-T1_GE3 at Vgs = 10V?

The typical on-resistance (Rds On) of the SQ4850CEY-T1_GE3 at Vgs = 10V is 0.022 Ω.

What is the continuous drain current rating for the SQ4850CEY-T1_GE3 at 25°C?

The continuous drain current (Id) for the SQ4850CEY-T1_GE3 at TC = 25°C is 12 A.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range for the SQ4850CEY-T1_GE3 is -55°C to +175°C.

What package type is the SQ4850CEY-T1_GE3 supplied in?

The SQ4850CEY-T1_GE3 is supplied in an 8-SOIC package.

Is the SQ4850CEY-T1_GE3 RoHS compliant?

The SQ4850CEY-T1_GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) for the SQ4850CEY-T1_GE3 is 1.

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