| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,348 pcs
|
2348 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SQ4840EY-T1_GE3 is an automotive-qualified N-Channel Power MOSFET utilizing TrenchFET technology. It offers a drain-source voltage of 40V and a continuous drain current of 20.7A at 25°C.
Key electrical characteristics include a low on-resistance of 9mΩ at 14A and 10V Vgs, and 12mΩ at Vgs of 4.5V. The gate charge is 62 nC maximum at 10V Vgs, and the input capacitance is 2440 pF maximum at 20V Vds.
This MOSFET operates over a wide temperature range of -55°C to 175°C. It is housed in an 8-SOIC package suitable for surface mounting.
The device is AEC-Q101 qualified, 100% Rg and UIS tested, making it suitable for demanding automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V minimum.
20.7A at TC=25°C.
9mOhm maximum at VGS=10V, ID=14A.
-55°C to 175°C.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
Typical 2V, maximum 2.5V at ID=250µA.
7.1W at TC=25°C.