| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4483EY-T1_GE3 is a P-Channel MOSFET designed for demanding applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 30A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (RDS(on)) of 8.5mΩ at Vgs = -10V and 20mΩ at Vgs = -4.5V. The gate-source threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The device is rated for a maximum power dissipation of 7W (Tc).
This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It operates across a wide temperature range from -55°C to +175°C, making it suitable for various environmental conditions. The TrenchFET power MOSFET technology ensures high performance and reliability.
It is AEC-Q101 qualified and 100% Rg and UIS tested, indicating suitability for automotive applications. The material is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30 V.
The maximum continuous drain current is 30 A.
The typical on-resistance at Vgs = -10V is 8.5 mΩ.
The operating temperature range is -55°C to +175°C.
It is supplied in an 8-SOIC package.