| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4435EY-T1_GE3 is a P-Channel TrenchFET power MOSFET designed for automotive applications, qualified to AEC-Q101 standards. It features a drain-source voltage (Vds) of 30V and a continuous drain current (ID) of 15A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds(on)) of 18mOhm at 10V gate-source voltage (Vgs) and 8A drain current, with a maximum gate-source voltage of ±20V. The operating junction and storage temperature range is -55°C to +175°C, making it suitable for demanding environments. The device is supplied in an 8-SOIC package, suitable for surface mounting.
Key electrical characteristics include an input capacitance (Ciss) of 2170 pF at 15V Vds and a gate charge (Qg) of 58 nC at 10V Vgs. The maximum power dissipation is rated at 6.8W at 25°C case temperature. It is 100% Rg and UIS tested, ensuring reliability for high-power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SQ4435EY-T1_GE3 is 30V.
The continuous drain current (ID) for the SQ4435EY-T1_GE3 is 15A at 25°C case temperature.
The operating junction and storage temperature range for the SQ4435EY-T1_GE3 is -55°C to +175°C.
The SQ4435EY-T1_GE3 is supplied in an 8-SOIC package.
The Rds(on) for the SQ4435EY-T1_GE3 is a maximum of 18mOhm at 8A drain current and 10V gate-source voltage.