| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Tape & Reel |
The Vishay Dale SQ4431EY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 10.8A at 25°C. The on-resistance (Rds On) is specified as a maximum of 30mΩ at 6A and 10V gate-source voltage.
Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a typical gate charge (Qg) of 38nC at 10V. The input capacitance (Ciss) is typically 1210pF at 25V. The device has a maximum power dissipation of 6W.
This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It is supplied on tape and reel with a standard package quantity of 2,500 units. The TrenchFET technology is utilized in its construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The package is 8-SOIC, a surface-mount package.
The continuous drain current is 10.8A at 25°C.
The maximum on-resistance is 30mΩ at a drain current of 6A and gate-source voltage of 10V.
The typical gate threshold voltage is 2.5V at 250µA drain current.
The typical gate charge is 38nC at 10V gate-source voltage.
The maximum power dissipation is 6W.