| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,520 pcs
|
13520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4431EY-T1_GE3 is a P-Channel MOSFET designed for demanding applications. It features a 30V drain-source voltage (VDS) and a continuous drain current (ID) of up to 10.8A at 25°C.
This MOSFET offers a low on-resistance (RDS(on)) of 30mOhm at 6A and 10V VGS, ensuring efficient power handling. It operates within a wide temperature range of -55°C to +175°C.
The device is built using TrenchFET® power MOSFET technology and is AEC-Q101 qualified, indicating its suitability for automotive applications. It comes in a standard 8-SOIC surface mount package.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) of 2.5V maximum at 250µA and a gate charge (Qg) of 25nC maximum at 10V VGS. The input capacitance (Ciss) is 1265pF maximum at 15V VDS.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30 V.
The maximum continuous drain current is -10.8 A at 25°C.
The on-resistance is 30mOhm at 6A and 10V VGS.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-SOIC package.
Yes, it is RoHS3 Compliant.