| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,845 pcs
|
7845 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SQ4425EY-T1_GE3 is a P-Channel MOSFET designed for automotive applications, featuring TrenchFET technology. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A at 25°C.
The MOSFET exhibits a low on-resistance (Rds On) of 12mOhm at 13A and 10V Vgs, and 19mOhm at 13A and 4.5V Vgs. It can withstand a gate-source voltage (Vgs) of up to ±20V and has a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA.
With a maximum power dissipation of 6.8W at 25°C, this device operates across a wide temperature range from -55°C to 175°C. It is AEC-Q101 qualified and 100% Rg and UIS tested, ensuring reliability for demanding applications. The component is supplied in an 8-SOIC surface-mount package.
Key electrical characteristics include an input capacitance (Ciss) of 3630pF at 25V and a gate charge (Qg) of 50nC at 4.5V. Thermal resistance from junction-to-ambient is 85°C/W when mounted on a 1" square PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30 V.
The continuous drain current is 18 A at 25°C and 10 A at 125°C.
The Rds On (Max) is 12 mOhm at 13A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-SOIC package.