| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4410EY-T1_GE3 is an automotive-qualified N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 15A at 25°C, with a maximum on-resistance of 0.012 Ohms at 10A and 10V.
This MOSFET utilizes TrenchFET technology and is AEC-Q101 qualified, ensuring reliability for demanding automotive environments. It operates across a wide temperature range of -55°C to 175°C. The component is housed in an 8-SOIC package suitable for surface mounting.
Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and a gate charge of 53 nC maximum. The device also offers a maximum power dissipation of 5W at 25°C. It is designed for efficient power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
15A at 25°C case temperature, 9A at 125°C.
Typical 2.0V, minimum 1.5V, maximum 2.5V.
12mOhm at 10A, 10V; 20mOhm at 4.5A, 4.5V.
-55°C to +175°C.
8-SOIC surface mount package (0.154", 3.90mm width).
53nC at 10V gate-source voltage.