SQ4401EY-T1_GE3 The Vishay Dale SQ4401EY-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and a continuous drain current of 17.3A. It is housed in an 8-SOIC package.
Mfr Part #:

SQ4401EY-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ4401EY-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and a continuous drain current of 17.3A. It is housed in an 8-SOIC package.
✓ Total Stock: 325,097 pcs
$ Price Range: $2.56

SQ4401EY-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SQ4401EY-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ4401EY-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ4401EY-T1_GE3 is a P-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 40V and a continuous drain current capability of 17.3A at 25°C. The MOSFET exhibits a low on-resistance, with a maximum of 14mOhm at 10.5A and 10V Vgs, and 23mOhm at 10.5A and 4.5V Vgs.

 

This device operates within a junction and storage temperature range of -55°C to 175°C. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, suitable for various electronic designs. The MOSFET is AEC-Q101 qualified and 100% R_g and UIS tested, indicating its suitability for automotive applications.

 

Key electrical characteristics include a gate threshold voltage of 2.5V maximum at 250µA and an input capacitance of 4250pF at 20V. The maximum power dissipation is rated at 7.14W at 25°C, decreasing to 2.4W at 125°C. Thermal resistance from junction to ambient is 85°C/W, and junction to foot is 21°C/W.

SQ4401EY-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 40V 17.3A 8-SOIC MOSFET
Subcategory: P-Channel

SQ4401EY-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ4401EY-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ4401EY-T1_GE3 Features

  • P-Channel 40V MOSFET
  • 17.3A continuous drain current
  • 14mOhm maximum RdsOn
  • 8-SOIC surface mount package
  • AEC-Q101 qualified

SQ4401EY-T1_GE3 Applications

  • Suitable for automotive applications
  • Power management circuits
  • Switching power supplies
  • Load switching applications

SQ4401EY-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 175°C.

What is the maximum continuous drain current?

17.3A at 25°C case temperature.

What is the on-resistance?

14mOhm maximum at Vgs=10V, Id=10.5A.

What is the gate threshold voltage?

1.5V minimum, 2.5V maximum.

What is the maximum power dissipation?

7.14W at 25°C case temperature.

Home
Account

Categories