| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SQ3989EV-T1_GE3 is a high-performance dual P-Channel MOSFET designed for demanding automotive applications. It features a TrenchFET power MOSFET technology and is AEC-Q101 qualified, ensuring reliability and performance.
With a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 2.5A at 25°C, this MOSFET is suitable for various power switching applications. The low on-state resistance (Rds(on)) of 155mΩ at 10V gate-source voltage minimizes power loss and heat generation.
The device operates over a wide temperature range of -55°C to +175°C, making it robust for harsh environments. It is housed in a compact TSOP-6 package, suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.5V and a gate charge (Qg) of 11.1nC. The MOSFET is also 100% R_g and UIS tested, further confirming its quality and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 2.5A at 25°C.
The Rds(on) is 155mΩ at 400mA, 10V.
The operating junction and storage temperature range is -55°C to +175°C.
The device is available in a TSOP-6 package.
Yes, the SQ3989EV-T1_GE3 is AEC-Q101 qualified.