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SQ3985EV-T1_GE3 The Vishay Dale SQ3985EV-T1_GE3 is a dual P-channel MOSFET designed for power applications. It features a 20V drain-source voltage and a continuous drain current of 3.9A.
Mfr Part #:

SQ3985EV-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ3985EV-T1_GE3 is a dual P-channel MOSFET designed for power applications. It features a 20V drain-source voltage and a continuous drain current of 3.9A.
✓ Total Stock: 183 pcs
$ Price Range: $1.64

SQ3985EV-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
183 pcs
On Request
183 pcs On Request 1 On Request On Request 18+ On Request On Request
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SQ3985EV-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SQ3985EV-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ3985EV-T1_GE3 is a dual P-channel MOSFET belonging to the TrenchFET® power MOSFET family. It is AEC-Q101 qualified and designed for demanding applications requiring high performance and reliability.

 

This MOSFET offers a drain-source breakdown voltage of -20V and a continuous drain current of up to 3.9A at 25°C. The on-resistance is rated at 145mΩ at a gate-source voltage of -4.5V. It operates within a wide temperature range of -55°C to +175°C.

 

The device is housed in a compact 6-TSOP package, suitable for surface mounting. Its dual P-channel configuration makes it versatile for various circuit designs. The MOSFET is also lead (Pb)-free and halogen-free.

 

Key electrical characteristics include a gate-source threshold voltage of -1.5V maximum and a gate-source voltage rating of ±8V. The maximum power dissipation is 3W at 25°C.

SQ3985EV-T1_GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SQ3985EV-T1_GE3 Dual P-Channel MOSFET
Subcategory: Array

SQ3985EV-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ3985EV-T1_GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ3985EV-T1_GE3 Features

  • Dual P-channel MOSFET configuration.
  • 20V drain-source breakdown voltage.
  • 3.9A continuous drain current.
  • Low on-resistance of 145mΩ.
  • 6-TSOP surface mount package.

SQ3985EV-T1_GE3 Applications

  • Suitable for power switching applications.
  • Ideal for battery management circuits.
  • Used in load switch designs.
  • Applicable in power distribution systems.

SQ3985EV-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQ3985EV-T1_GE3?

-20V minimum at VGS = 0 V, ID = -250 μA.

What is the operating temperature range?

-55°C to +175°C.

What package does the SQ3985EV-T1_GE3 come in?

TSOP-6 surface mount package (6-TSOP supplier device package).

What is the on-resistance at VGS = -4.5V?

Typical 0.145Ω.

What is the gate threshold voltage?

Maximum -1.5V at VDS = VGS, ID = -250 μA.

What is the continuous drain current rating?

-3.9A at case temperature 25°C; -2.2A at 125°C.

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