| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,110 pcs
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28110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ3469EV-T1_GE3 is an automotive-qualified P-Channel MOSFET designed for power management applications. It features a TrenchFET power MOSFET design, offering a drain-source voltage of -20V and a continuous drain current of -8A at 25°C.
Key electrical characteristics include a maximum on-resistance of 36mOhm at Vgs = -10V and a gate-source threshold voltage of 2.5V maximum. The device operates over a wide temperature range from -55°C to +175°C.
This MOSFET is supplied in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, suitable for space-constrained designs. It is AEC-Q101 qualified, indicating its suitability for automotive applications. The material is RoHS3 compliant and halogen-free.
Applications include power switching, load switching, and battery management in automotive and industrial systems where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is -20 V.
The continuous drain current is -8 A at 25°C.
The maximum on-resistance is 36mOhm at a drain current of 6.7A and a gate-source voltage of -10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a 6-TSOP package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.