| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQ3457EV-T1_GE3 is a P-Channel MOSFET manufactured by Vishay Dale. It features a drain-source breakdown voltage of -30V (minimum) and a continuous drain current rating of -6.8A at 25°C case temperature, derated to -3.9A at 125°C. The device can handle pulsed drain currents up to -27A. On-istance is specified as 65mOhm maximum at Vgs = 10V and Id = 6A. Gate-source threshold voltage is 2.5V maximum at Vds=Vgs, Id=-250uA. Maximum power dissipation is 5W at 25°C case temperature.
The MOSFET is intended for surface-mount applications and is offered in a 6-TSOP package (6-lead small outline package). It has a junction temperature range from -55°C to 175°C, with a junction-ambient thermal resistance of 110°C/W (typ) and junction-fot thermal resistance of 30°C/ W (typ). The device is suitable for power management and load switching in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 175°C.
The minimum drain-source breakdown voltage is -30 V at Vgs = 0 V and Id = -250 uA.
The continuous drain current is -6.8 A at case temperature 25°C and -3.9 A at 125°C.