SQ3456BEV-T1_GE3 The Vishay Dale SQ3456BEV-T1_GE3 is an automotive-grade N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 7.8A.
Mfr Part #:

SQ3456BEV-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ3456BEV-T1_GE3 is an automotive-grade N-Channel MOSFET designed for power applications. It features a 30V drain-source voltage and a continuous drain current of 7.8A.
✓ Total Stock: 10,020 pcs
$ Price Range: $2.56

SQ3456BEV-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request

SQ3456BEV-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ3456BEV-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ3456BEV-T1_GE3 is an automotive-qualified N-Channel TrenchFET Power MOSFET. It offers a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 7.8A at 25°C.

 

Key electrical characteristics include a low on-resistance (RDS(on)) of 35mOhm at 6A and 10V VGS, and a gate charge (Qg) of 10nC at 10V VGS. The MOSFET operates over a wide temperature range from -55°C to 175°C.

 

This device is supplied in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. It is AEC-Q101 qualified and 100% Rg and UIS tested, ensuring reliability for automotive applications.

 

The SQ3456BEV-T1_GE3 is lead (Pb)-free and halogen-free, aligning with environmental compliance standards.

SQ3456BEV-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ3456BEV-T1_GE3 N-Channel 30V 7.8A TrenchFET Power MOSFET
Subcategory: N-Channel

SQ3456BEV-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ3456BEV-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ3456BEV-T1_GE3 Features

  • Automotive grade N-Channel MOSFET
  • 30V drain-source breakdown voltage
  • 7.8A continuous drain current
  • Low 35mOhm on-resistance
  • 175°C maximum operating temperature

SQ3456BEV-T1_GE3 Applications

  • Ideal for automotive power management
  • Suitable for DC-DC converters
  • Used in load switch applications
  • Effective in battery protection circuits

SQ3456BEV-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SQ3456BEV-T1_GE3?

The drain-source breakdown voltage is 30 V.

What is the maximum gate-source voltage for this MOSFET?

The maximum gate-source voltage is ±20 V.

What is the continuous drain current at 25°C?

The continuous drain current is 7.8 A at 25°C.

What is the maximum on-resistance at 10V gate drive?

The maximum on-resistance is 35 mOhm at 6A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQ3456BEV-T1_GE3 supplied in?

It is supplied in a TSOP-6 package.

Is this MOSFET lead (Pb)-free and halogen-free?

Yes, the SQ3456BEV-T1_GE3 is lead (Pb)-free and halogen-free.

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