| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQ3427EV-T1_GE3 is a P-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of -60V and a continuous drain current of -5.3A at 25°C case temperature. The typical gate-source threshold voltage is -1.5V with a maximum of -2.5V.
This MOSFET has a maximum power dissipation of 5W at 25°C and 1.6W at 125°C. The input capacitance is 1000pF at VDS = 30V. It supports single pulse avalanche energy up to 22mJ. The operating junction temperature range is -55°C to 175°C.
The device is offered in a 6TSOP package, suitable for surface mount applications. It is designed for switching and power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum -60V.
Maximum -5.3A at TC=25°C.
Typical -1.5V, maximum -2.5V at ID=-250µA.
-55°C to 175°C.
5W at TC=25°C, 1.6W at TC=125°C.
1000pF at VDS=30V.
22mJ maximum single pulse.