SQ3427EEV-T1-GE3 The Vishay Dale SQ3427EEV-T1-GE3 is a P-Channel MOSFET designed for 60V applications with a continuous drain current of 5.5A. It features a SOT-23-6 Thin package.
Mfr Part #:

SQ3427EEV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ3427EEV-T1-GE3 is a P-Channel MOSFET designed for 60V applications with a continuous drain current of 5.5A. It features a SOT-23-6 Thin package.
✓ Total Stock: 234,795 pcs
$ Price Range: $2.56

SQ3427EEV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
231,795 pcs
231795 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

SQ3427EEV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ3427EEV-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SQ3427EEV-T1-GE3 is a P-Channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current capability of 5.5A. It operates within a temperature range of -55°C to 175°C.

 

The MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a SOT-23-6 Thin, TSOT-23-6 package, designed for surface mounting. Key electrical characteristics include a maximum gate threshold voltage of 2.5V at 250µA, a maximum gate charge of 32nC at 10V, and a maximum on-resistance of 82mOhm at 4.5A and 10V.

 

With a maximum power dissipation of 5W (Tc), this component is suitable for various power management applications. It is RoHS3 compliant and has an MSL rating of 1.

SQ3427EEV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ3427EEV-T1-GE3 P-Channel MOSFET
Subcategory: Single

SQ3427EEV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SQ3427EEV-T1-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ3427EEV-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 60V drain-to-source voltage rating.
  • 5.5A continuous drain current.
  • Surface mount SOT-23-6 Thin package.
  • RoHS3 compliant status.

SQ3427EEV-T1-GE3 Applications

  • High-side load switching for portable devices.
  • Battery protection circuits in consumer electronics.
  • Power management for IoT modules.
  • DC-DC converter load disconnect.

SQ3427EEV-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SQ3427EEV-T1-GE3?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current of the SQ3427EEV-T1-GE3?

The continuous drain current is 5.5A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the SQ3427EEV-T1-GE3 supplied in?

It is supplied in a SOT-23-6 Thin, TSOT-23-6 package.

Is the SQ3427EEV-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

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