| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
315 pcs
|
315 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ3426EV-T1_GE3 is an N-channel power MOSFET featuring TrenchFET® technology, making it suitable for demanding automotive applications. It boasts a drain-source voltage (Vds) of 60V and can handle a continuous drain current (Id) of 7A at 25°C, with a reduced current rating of 4A at 125°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 42mΩ at 5A and 10V gate drive, and 63mΩ at 5A and 4.5V gate drive. The gate threshold voltage (Vgs(th)) is typically 2V, with a maximum of 2.5V at 250µA. The device operates over a wide temperature range from -55°C to 175°C.
Packaged in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, the SQ3426EV-T1_GE3 is designed for efficient thermal management, with a junction-to-ambient thermal resistance of 110°C/W and junction-to-foot of 30°C/W. It is AEC-Q101 qualified and 100% R_g and UIS tested, ensuring reliability for automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SOT-23-6 Thin, TSOT-23-6 surface mount package.
-55°C to 175°C.
7A at 25°C case temperature, 4A at 125°C.
1.5V minimum, 2.5V maximum.
42mΩ maximum at 5A, 10V gate drive.
5W at 25°C case temperature.