| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,000 pcs
|
23000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ3426AEEV-T1_GE3 is a high-performance N-Channel MOSFET with a 60V drain-source voltage rating. It is designed for applications requiring robust power handling, featuring a continuous drain current of 7A at 25°C and a maximum power dissipation of 5W. The MOSFET exhibits a low on-resistance of 42mOhm at 5A and 10V Vgs, and 63mOhm at 4.5V Vgs.
This device operates across a wide temperature range from -55°C to 175°C, making it suitable for harsh environments. It is housed in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, facilitating efficient board space utilization. The SQ3426AEEV-T1_GE3 is AEC-Q101 qualified and features typical ESD protection of 800V HBM, ensuring reliability in automotive and industrial applications.
Key electrical characteristics include an input capacitance of 700pF at 30V and a gate charge of 12nC at 4.5V Vgs. The MOSFET is manufactured using TrenchFET technology, known for its efficiency and performance. It is also specified as Lead (Pb)-free and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum at VGS=0, ID=250μA.
SOT-23-6 Thin, TSOT-23-6, with supplier device package 6-TSOP.
-55°C to 175°C junction and storage.
7A at 25°C case temperature, 4A at 125°C.
42mOhm maximum at ID=5A, VGS=10V; 63mOhm at VGS=4.5V.
12nC maximum at VGS=4.5V.
5W at 25°C case temperature, 1.6W at 125°C.