| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,856 pcs
|
7856 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
7,847 pcs
|
7847 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQ3418AEEV-T1_GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 7.8A. The device is designed for efficient switching and power management applications.
The gate-source voltage (Vgs) is rated at ±20V maximum, and the gate threshold voltage (Vgs(th)) is 2.5V at 250µA drain current. These electrical characteristics make it suitable for low-voltage power conversion and load switching circuits.
The MOSFET is housed in a 6TSOP surface-mount package, which is compact and suitable for automated assembly. The part is typically used in applications requiring high efficiency and reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The gate threshold voltage is 2.5V at a drain current of 250µA.
The maximum gate-source voltage is ±20V.