SQ3410EV-T1_GE3 The Vishay Dale SQ3410EV-T1_GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It is designed for surface mounting in a TSOP-6 package.
Mfr Part #:

SQ3410EV-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ3410EV-T1_GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It is designed for surface mounting in a TSOP-6 package.
✓ Total Stock: 22,020 pcs
$ Price Range: $0.35

SQ3410EV-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request 18+ On Request On Request

SQ3410EV-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ3410EV-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ3410EV-T1_GE3 is an automotive-qualified N-Channel Power MOSFET featuring TrenchFET technology. It offers a 30V drain-source voltage and a continuous drain current of 8A at 25°C. The MOSFET has a low on-resistance of 17.5mΩ at 5A and 10V gate-source voltage.

 

Designed for demanding applications, this device operates at temperatures ranging from -55°C to 175°C. It is packaged in a compact TSOP-6 (SOT-23-6 Thin) surface-mount package, making it suitable for space-constrained designs. The MOSFET is 100% Rg and UIS tested, ensuring reliability and performance.

 

Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and a gate charge of 21nC maximum. The maximum power dissipation is rated at 5W at 25°C case temperature. This component is lead (Pb)-free and halogen-free.

SQ3410EV-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ3410EV-T1_GE3 N-Channel 30V 8A 175°C MOSFET
Subcategory: N-Channel

SQ3410EV-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ3410EV-T1_GE3 Estimated Pricing

Qty Low High
1+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ3410EV-T1_GE3 Features

  • Automotive N-Channel 30V MOSFET
  • Low Rds(on) of 17.5mOhm at 10V
  • High temperature operation to 175°C
  • Compact TSOP-6 surface mount package
  • AEC-Q101 Qualified

SQ3410EV-T1_GE3 Applications

  • Suitable for automotive applications
  • Ideal for power management circuits
  • Used in high-temperature environments
  • Space-constrained designs

SQ3410EV-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQ3410EV-T1_GE3?

The minimum drain-source breakdown voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 8A at a case temperature of 25°C.

What is the gate threshold voltage range?

The gate threshold voltage is typically 2V, with a range of 1.5V to 2.5V.

What is the Rds(on) of the device?

The maximum Rds(on) is 17.5 mΩ at Vgs=10V and Id=5A, and 21.3 mΩ at Vgs=4.5V.

What package is the SQ3410EV-T1_GE3 available in?

It is available in a TSOP-6 package (also referred to as SOT-23-6 Thin, TSOT-23-6) with a supplier device package of 6-TSOP.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What is the maximum power dissipation?

The maximum power dissipation is 5W at a case temperature of 25°C.

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