| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| Operating Temperature |
The Vishay Dale SQ3410EV is an N-Channel Vertical DMOS SPICE model, suitable for both linear and switching applications. This macro model is optimized for accuracy across a temperature range of -55 °C to +125 °C.
Key electrical characteristics include a typical Gate Threshold Voltage of 2V, a Drain-Source On-State Resistance of 0.014 Ω at VGS = 10V and ID = 5A, and a Forward Transconductance of 25 S. Dynamic characteristics include an Input Capacitance of 804 pF, Output Capacitance of 175 pF, and Reverse Transfer Capacitance of 68 pF.
The model simulates gate charge characteristics using a novel feedback capacitance network. It is extracted and optimized over specified temperature ranges under pulsed gate drive conditions. Designers should refer to the appropriate commercial datasheet for guaranteed specification limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical Gate Threshold Voltage (Vgs(th)) for the SQ3410EV is 2 V.
The typical Drain-Source On-State Resistance (Rds(on)) at VGS = 10 V and ID = 5 A is 0.014 Ω.
The typical Forward Transconductance (gfs) is 25 S under test conditions of VDS = 15 V and ID = 5 A.
The typical Input Capacitance (Ciss) is 804 pF, measured at VDS = 15 V, VGS = 0 V, and f = 1 MHz.
This SPICE model is accurate over the temperature range of -55 °C to +125 °C.
The Drain-Source Breakdown Voltage is 30 V.
The maximum junction temperature is 175 °C.