| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
7,475 pcs
|
7475 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,597 pcs
|
1597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQ2389ES-T1_GE3 is a p-channel power MOSFET from Vishay Dale. It offers a drain-source breakdown voltage of -40V and a maximum continuous drain current of -4.1A at 25°C case temperature. The device is housed in a compact SOT23-3 surface-mount package.
Electrical characteristics include a typical gate-source threshold voltage of -2V (maximum -2.5V), enabling low-voltage gate drive. Gate-source leakage is limited to ±100nA and zero gate voltage drain current is -1μA maximum. The MOSFET can handle pulsed drain currents up to -16A and single-pulse avalanche energy of 7.2mJ.
As a p-channel device, it is suited for high-side switching applications and can be used in power distribution or load switching circuits. The SOT23-3 package offers a small footprint for space-constrained PCB layouts. Continuous source current is rated at -3.6A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -40V at Vgs=0V and Id=-250μA.
The maximum continuous drain current is -4.1A at Tc=25°C and -2.4A at Tc=125°C.
The typical gate-source threshold voltage is -2V, with a maximum of -2.5V at Vds=Vgs and Id=-250μA.
The maximum pulsed drain current is -16A.
The single pulse avalanche energy is 7.2mJ with L=0.1mH.
The maximum gate-source leakage is ±100nA at Vgs=±20V.
The SQ2389ES-T1_GE3 is supplied in a SOT23-3 surface-mount package.