| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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107,635 pcs
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107635 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
379 pcs
|
379 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
61 pcs
|
61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The Vishay Dale SQ2364EES-T1_GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a 60V drain-source voltage and a continuous drain current of 2A at 25°C, with a maximum power dissipation of 3W.
This MOSFET offers a low on-resistance of 240mOhm at 2A and 4.5V Vgs, and a typical on-resistance of 0.245 Ohm at 1.5V Vgs. The gate-source threshold voltage is typically 0.46V and can reach up to 1V. It operates within a wide temperature range of -55°C to 175°C.
Packaged in a surface-mount SOT-23-3 (TO-236) case, the SQ2364EES-T1_GE3 is suitable for space-constrained designs. Its TrenchFET power MOSFET technology ensures efficient performance. The device is AEC-Q101 qualified, 100% Rg and UIS tested, and offers typical ESD protection of 800V.
This component is RoHS3 compliant and has an MSL rating of 1. It is designed for various power management applications where reliability and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 2A at 25°C.
The typical on-resistance is 0.245 Ohms at 1.5V Vgs.
The operating temperature range is -55°C to 175°C.
It is supplied in a SOT-23-3 (TO-236) package.