SQ2364EES-T1_GE3 The Vishay Dale SQ2364EES-T1_GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 2A continuous drain current. It comes in a compact SOT-23 package.
Mfr Part #:

SQ2364EES-T1_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2364EES-T1_GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 2A continuous drain current. It comes in a compact SOT-23 package.
✓ Total Stock: 108,075 pcs
$ Price Range: $2.56

SQ2364EES-T1_GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
107,635 pcs
107635 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
379 pcs
379 pcs On Request 1 On Request On Request On Request On Request On Request
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61 pcs
61 pcs On Request 1 On Request On Request On Request On Request On Request

SQ2364EES-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2364EES-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2364EES-T1_GE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a 60V drain-source voltage and a continuous drain current of 2A at 25°C, with a maximum power dissipation of 3W.

 

This MOSFET offers a low on-resistance of 240mOhm at 2A and 4.5V Vgs, and a typical on-resistance of 0.245 Ohm at 1.5V Vgs. The gate-source threshold voltage is typically 0.46V and can reach up to 1V. It operates within a wide temperature range of -55°C to 175°C.

 

Packaged in a surface-mount SOT-23-3 (TO-236) case, the SQ2364EES-T1_GE3 is suitable for space-constrained designs. Its TrenchFET power MOSFET technology ensures efficient performance. The device is AEC-Q101 qualified, 100% Rg and UIS tested, and offers typical ESD protection of 800V.

 

This component is RoHS3 compliant and has an MSL rating of 1. It is designed for various power management applications where reliability and efficiency are critical.

SQ2364EES-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ2364EES-T1_GE3 N-Channel 60V 2A SOT-23 MOSFET
Subcategory: N-Channel

SQ2364EES-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ2364EES-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2364EES-T1_GE3 Features

  • 60V drain-source voltage rating.
  • 2A continuous drain current capability.
  • Low 240mOhm on-resistance.
  • Compact SOT-23 surface-mount package.
  • AEC-Q101 qualified for automotive use.

SQ2364EES-T1_GE3 Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load switch applications.
  • Applicable in battery management systems.

SQ2364EES-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQ2364EES-T1_GE3?

The maximum drain-source voltage is 60V.

What is the continuous drain current of the SQ2364EES-T1_GE3?

The continuous drain current is 2A at 25°C.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 0.245 Ohms at 1.5V Vgs.

What is the operating temperature range for the SQ2364EES-T1_GE3?

The operating temperature range is -55°C to 175°C.

What package type is the SQ2364EES-T1_GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

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