| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,107 pcs
|
1107 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2361ES-T1_GE3 is a P-Channel Power MOSFET from the SQ series, designed for demanding applications requiring robust performance. This component features a maximum drain-source voltage of 60V and a continuous drain current of 2.8A at 25°C.
Key electrical characteristics include a maximum drain-source on-resistance (RDS(on)) of 177mΩ at 10V gate-source voltage. The device operates within a wide temperature range of -55°C to 175°C, making it suitable for various environmental conditions. It is housed in a compact SOT-23 (TO-236-3) surface-mount package, facilitating integration into space-constrained designs.
This MOSFET is AEC-Q101 qualified, indicating its suitability for automotive applications. It also boasts lead (Pb)-free and halogen-free construction, aligning with environmental compliance standards. The TrenchFET power MOSFET technology ensures efficient power handling and thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V maximum.
SOT-23-3.
-55°C to +175°C.
Maximum -2.5V, minimum -1.5V at VDS=VGS, ID=-250μA.
-2.8A at 25°C case temperature.
Maximum 0.177Ω at VGS=-10V, 2.4A.
2W at 25°C case temperature.