SQ2361EES-T1-GE3 The Vishay Dale SQ2361EES-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for automotive applications. It offers a 60V drain-source voltage and a 2.5A continuous drain current in a compact SOT-23 package.
Mfr Part #:

SQ2361EES-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2361EES-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for automotive applications. It offers a 60V drain-source voltage and a 2.5A continuous drain current in a compact SOT-23 package.
✓ Total Stock: 226,763 pcs
$ Price Range: $2.56

SQ2361EES-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
226,000 pcs
226000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
763 pcs
763 pcs On Request 1 On Request On Request 15+ On Request On Request

SQ2361EES-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2361EES-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2361EES-T1-GE3 is an automotive-qualified P-Channel TrenchFET Power MOSFET. It features a drain-source voltage of 60V and a continuous drain current of 2.5A at 25°C, with a maximum power dissipation of 2W. The MOSFET has a low on-resistance of 150mΩ at 10V gate-source voltage and 2.4A drain current.

 

Designed for demanding applications, this device operates across a wide temperature range from -55°C to 175°C. It is AEC-Q101 qualified and 100% R_g and UIS tested, ensuring reliability and performance. The component comes in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

 

Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum at 250µA and input capacitance of 545pF at 30V. The typical ESD protection is rated at 800V. This MOSFET is also lead (Pb)-free and halogen-free, meeting environmental standards.

SQ2361EES-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 60 V 2.5 A SOT-23 TrenchFET Power MOSFET
Subcategory: P-Channel

SQ2361EES-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ2361EES-T1-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2361EES-T1-GE3 Features

  • Automotive P-Channel 60V MOSFET
  • TrenchFET Power MOSFET technology
  • AEC-Q101 Qualified
  • 100% R_g and UIS Tested
  • SOT-23 package for surface mounting

SQ2361EES-T1-GE3 Applications

  • Ideal for automotive power switching
  • Suitable for general purpose switching
  • Used in power management circuits
  • Efficient for load switching applications

SQ2361EES-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 60 V.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage is 1.5 V.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the package type?

The package type is SOT-23-3 (TO-236).

What is the continuous drain current?

The continuous drain current is 2.5 A at 25°C.

What is the Rds On at Vgs = -10V?

The Rds On is 150mOhm at Vgs = -10V.

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