| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
145,800 pcs
|
145800 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,463 pcs
|
1463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2361AEES-T1_GE3 is a P-Channel TrenchFET power MOSFET designed for automotive applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 2.8A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 170mΩ at a gate-source voltage (Vgs) of -10V and a gate charge (Qg) of 15nC at 10V. The device has a typical ESD protection of 800V and is AEC-Q101 qualified, ensuring reliability for demanding environments.
Packaged in a compact SOT-23 (TO-236-3) surface-mount case, this MOSFET is suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 175°C, making it versatile for various applications. The material is lead (Pb)-free and halogen-free.
This MOSFET is tested 100% for R_g and UIS, further confirming its robust performance. Its typical application includes power switching and load management in automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -60 V.
The maximum continuous drain current is -2.8 A at TC = 25 °C and -1.6 A at TC = 125 °C.
The maximum on-resistance is 170 mΩ at VGS = -10 V, ID = -2.4 A and 230 mΩ at VGS = -4.5 V, ID = -2.4 A.
It comes in a SOT-23 surface mount package (TO-236-3, SC-59, SOT-23-3).
The operating junction and storage temperature range is -55°C to +175°C.
The gate-source threshold voltage ranges from a minimum of -1.5 V to a maximum of -2.5 V at VDS = VGS, ID = -250 μA.
The maximum power dissipation is 2 W at TC = 25 °C and 0.67 W at TC = 125 °C.