| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
904,000 pcs
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904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SQ2360EES-T1-GE3 is an automotive-qualified N-Channel Power MOSFET designed for high-performance applications. It features a 60V drain-source breakdown voltage and a continuous drain current of up to 4.4A at 25°C.
This MOSFET boasts a low on-resistance of 0.085 Ohms at VGS = 10V and 0.130 Ohms at VGS = 4.5V, ensuring efficient power transfer. It is rated for operation up to 175°C, making it suitable for demanding thermal environments. The device is housed in a compact SOT-23 (TO-236) surface-mount package.
Key features include TrenchFET® technology, 100% Rg and UIS tested, and typical ESD protection of 800V. The SQ2360EES-T1-GE3 is AEC-Q101 qualified and offered in lead (Pb)-free and halogen-free packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at VGS=0V, ID=250μA.
The component is housed in a surface-mount SOT-23-3 package.
The operating junction and storage temperature range is -55 to +175°C.
The maximum gate threshold voltage is 2.5V at VDS=VGS, ID=250μA.
The typical input capacitance is 370pF at VDS=25V.
The maximum on-resistance is 85mΩ at ID=6A, VGS=10V.
The maximum gate charge is 12nC at VGS=10V.