| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | 1731+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2351ES-T1_GE3 is a P-Channel MOSFET belonging to the TrenchFET® power MOSFET family. It is designed for applications requiring efficient power switching and management.
This MOSFET offers a drain-source breakdown voltage of -20V and a continuous drain current of up to 3.2A at 25°C. The on-resistance is as low as 0.115Ω at VGS = -4.5V, ensuring minimal power loss during operation. It operates within a wide temperature range of -55°C to +175°C.
The device is housed in a compact SOT-23-3 (TO-236-3) surface-mount package, making it suitable for space-constrained designs. It is AEC-Q101 qualified and 100% Rg and UIS tested, indicating its suitability for automotive applications.
Key electrical characteristics include a gate-source threshold voltage of -1.0V (typical) and a maximum gate-source voltage of ±12V. The input capacitance is 330pF at 10V, and the gate charge is 5.5nC at 4.5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20V
0.115Ω
-3.2A
-55°C ~ 175°C
SOT-23-3
Yes