Mfr Part #:

SQ2337ES-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQ2337ES-T1_GE3 is a P-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 2.2A. It is housed in a compact SOT-23-3 package.

✓ Total Stock: 252,582 pcs

$ Price Range: $2.56

SQ2337ES-T1_GE3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	250,020 pcs On Request	250020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,357 pcs On Request	1357 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	205 pcs On Request	205 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQ2337ES-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2337ES-T1_GE3 is an automotive-qualified P-Channel Power MOSFET designed for high-performance applications. It features a TrenchFET construction for improved efficiency and a drain-source voltage (Vds) rating of 80V.

Key electrical characteristics include a maximum continuous drain current of 2.2A at 25°C and a low on-resistance (Rds On) of 290mΩ at 1A and Vgs of 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The device operates over a wide temperature range from -55°C to 175°C.

This MOSFET is supplied in a surface-mount SOT-23-3 (TO-236) package, making it suitable for space-constrained designs. It is AEC-Q101 qualified, 100% Rg and UIS tested, and available in lead (Pb)-free and halogen-free options, indicating its suitability for demanding automotive and industrial applications requiring high reliability and compliance.

SQ2337ES-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQ2337ES-T1_GE3 P-Channel 80 V MOSFET

Subcategory: P-Channel

SQ2337ES-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead (Pb)-free

SQ2337ES-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2337ES-T1_GE3 Features

Automotive P-Channel 80V MOSFET.
Low on-resistance of 290mΩ.
Compact SOT-23-3 surface mount package.
AEC-Q101 qualified for reliability.
Lead (Pb)-free and halogen-free.

SQ2337ES-T1_GE3 Applications

Ideal for automotive power switching.
Suitable for battery management circuits.
Used in load switch applications.
Effective in DC-DC converters.

SQ2337ES-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

-80 V (minimum).

What is the package type?

SOT-23-3 (also TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 175°C.

What is the continuous drain current?

2.2A at 25°C case temperature.

What is the gate threshold voltage?

Typically 1.5V, maximum 2.5V.

What is the on-resistance?

Maximum 290mΩ at VGS=4.5V, ID=1A; typical 0.290Ω at VGS=-10V.

What is the maximum power dissipation?

3W at 25°C case temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	2.2 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Halogen Free	Halogen-free
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	290 mΩ
SVHC Present	Not Present
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	1.5 V / 2.5 V