SQ2325ES-T1_GE3 The Vishay Dale SQ2325ES-T1_GE3 is a P-Channel MOSFET with a 150V drain-source voltage and a continuous drain current of 840mA. It is housed in a surface-mount SOT-23 package.
Mfr Part #:

SQ2325ES-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2325ES-T1_GE3 is a P-Channel MOSFET with a 150V drain-source voltage and a continuous drain current of 840mA. It is housed in a surface-mount SOT-23 package.
✓ Total Stock: 34,020 pcs
$ Price Range: $2.56

SQ2325ES-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
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SQ2325ES-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2325ES-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2325ES-T1_GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 150V and a maximum continuous drain current of 840mA at 25°C. The on-resistance (Rds On) is specified at 1.77 Ohms at a gate-source voltage (Vgs) of -10V and a drain current (Id) of 500mA.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It has a gate-source threshold voltage (Vgs(th)) of up to 3.5V at 250µA and a gate-source voltage limit of ±20V. The input capacitance (Ciss) is a maximum of 250pF at 50V, and the gate charge (Qg) is a maximum of 10nC at 10V.

 

The device is packaged in a SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It offers a maximum power dissipation of 3W at 25°C. The SQ2325ES-T1_GE3 is also noted as being RoHS3 compliant, Lead (Pb)-free, and Halogen-free.

SQ2325ES-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ2325ES-T1_GE3 P-Channel 150V 0.84A (Tc) 3W (Tc) Surface Mount SOT-23 MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SQ2325ES-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ2325ES-T1_GE3 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2325ES-T1_GE3 Features

  • P-Channel MOSFET with 150V drain-source voltage.
  • Maximum continuous drain current of 840mA.
  • On-resistance of 1.77 Ohms at 10V gate drive.
  • Surface mount SOT-23 package for compact designs.
  • Operates from -55°C to 175°C junction temperature.

SQ2325ES-T1_GE3 Applications

  • Suitable for high-side load switching.
  • Used in power management circuits.
  • Ideal for battery-powered devices.
  • Applicable in automotive systems.
  • General purpose switching applications.

SQ2325ES-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQ2325ES-T1_GE3?

The maximum drain-source voltage is 150 V.

What is the typical operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the SQ2325ES-T1_GE3 MOSFET supplied in?

The MOSFET is supplied in a SOT-23-3 (TO-236) surface mount package.

Is the SQ2325ES-T1_GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is -0.84 A.

What is the on-resistance of the SQ2325ES-T1_GE3 at Vgs = -10V?

The on-resistance is 1.77 Ohm at Vgs = -10V and Id = 500mA.

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