SQ2319ES-T1-GE3 The Vishay Dale SQ2319ES-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 4.6A. It is housed in a SOT-23-3 package.
Mfr Part #:

SQ2319ES-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2319ES-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 4.6A. It is housed in a SOT-23-3 package.
✓ Total Stock: 4,572 pcs
$ Price Range: $2.56

SQ2319ES-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SQ2319ES-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SQ2319ES-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2319ES-T1-GE3 is an automotive-qualified P-Channel MOSFET designed for demanding applications. It features a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 4.6A at 25°C.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 75mOhm at 3A and 10V Vgs, minimizing power loss and heat generation. The gate-source threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.

 

With an operating junction and storage temperature range of -55°C to +175°C, the SQ2319ES-T1-GE3 is suitable for high-temperature environments. It is packaged in a compact TO-236-3 (SOT-23-3) surface-mount package, making it ideal for space-constrained designs.

 

Key electrical characteristics include an input capacitance (Ciss) of 620pF at 25V and a gate charge (Qg) of 16nC at 10V. The device is also 100% Rg and UIS tested, ensuring reliability and performance.

SQ2319ES-T1-GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale SQ2319ES-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SQ2319ES-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SQ2319ES-T1-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2319ES-T1-GE3 Features

  • Automotive P-Channel 40V MOSFET
  • Low Rds(on) of 75mOhm at 3A, 10V
  • 4.6A continuous drain current
  • SOT-23-3 surface mount package
  • 100% Rg and UIS tested

SQ2319ES-T1-GE3 Applications

  • Ideal for power switching circuits
  • Suitable for automotive applications
  • Used in compact electronic designs
  • Efficient load management solutions

SQ2319ES-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SQ2319ES-T1-GE3?

The drain-source voltage is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.6A at 25°C.

What is the on-state resistance of this MOSFET?

The on-state resistance is a maximum of 75mOhm at 3A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQ2319ES-T1-GE3 in?

It is in a TO-236-3, SC-59, SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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