| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
27 pcs
|
27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2318BES-T1_GE3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 8A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 26.3mOhm at 4A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The input capacitance (Ciss) is 500pF at 25V, and the gate charge (Qg) is 9.4nC at 10V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 3W (Tc). It is packaged in a SOT-23-3 (TO-236) surface mount case, suitable for compact designs.
The device utilizes MOSFET (Metal Oxide) technology and has a maximum gate-source voltage (Vgs) of ±20V. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8A at case temperature.
26.3mOhm maximum at 4A drain current and 10V gate-source voltage.
SOT-23-3 (also TO-236-3, SC-59).
-55°C to 175°C junction temperature.
2.5V maximum at 250µA drain current.