SQ2318AES-T1_GE3 The Vishay Dale SQ2318AES-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 40V drain-source voltage and a continuous drain current of 8A.
Mfr Part #:

SQ2318AES-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2318AES-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 40V drain-source voltage and a continuous drain current of 8A.
✓ Total Stock: 35,270 pcs
$ Price Range: $2.56

SQ2318AES-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SQ2318AES-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2318AES-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2318AES-T1_GE3 is a high-performance N-Channel Power MOSFET. It features a 40V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 31mΩ at 7.9A and 10V Vgs, and 36mΩ at 7.9A and 4.5V Vgs. It operates within a wide temperature range of -55°C to 175°C.

 

Packaged in a compact SOT-23-3 (TO-236) surface-mount package, the SQ2318AES-T1_GE3 is suitable for space-constrained designs. Its TrenchFET technology and AEC-Q101 qualification make it ideal for automotive and industrial applications requiring reliable power switching.

 

Key electrical characteristics include a gate-source voltage range of ±20V and a gate charge of 13nC maximum. The device also offers a maximum power dissipation of 3W at 25°C case temperature.

SQ2318AES-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ2318AES-T1_GE3 N-Channel 40V 8A SOT-23 MOSFET
Subcategory: N-Channel

SQ2318AES-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ2318AES-T1_GE3 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2318AES-T1_GE3 Features

  • 40V drain-source breakdown voltage.
  • 8A continuous drain current.
  • Low on-resistance of 31mΩ.
  • SOT-23-3 surface-mount package.
  • AEC-Q101 qualified for automotive use.

SQ2318AES-T1_GE3 Applications

  • Suitable for power switching applications.
  • Ideal for automotive designs.
  • Used in space-constrained systems.
  • Efficient power management solutions.

SQ2318AES-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V minimum at VGS=0V and ID=250µA.

What is the continuous drain current rating?

The continuous drain current is 8A maximum at TC=25°C and 4.6A maximum at TC=125°C.

What is the on-resistance?

The on-resistance is 31mΩ maximum at VGS=10V and ID=7.9A, and 36mΩ maximum at VGS=4.5V and ID=7.9A.

What is the gate-source threshold voltage?

The gate-source threshold voltage is between 1.5V and 2.5V, with a typical value of 2V, at VDS=VGS and ID=250µA.

What package is this MOSFET available in?

The device comes in a SOT-23-3 surface-mount package, also designated as TO-236-3, SC-59, SOT-23-3.

What is the operating junction temperature range?

The operating junction and storage temperature range is from -55°C to +175°C.

What is the maximum power dissipation?

The maximum power dissipation is 3W at TC=25°C, and 1W at TC=125°C.

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