| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,216 pcs
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6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2318AES-T1_GE3 is a high-performance N-Channel Power MOSFET. It features a 40V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C case temperature.
This MOSFET boasts a low on-resistance of 31mΩ at 7.9A and 10V Vgs, and 36mΩ at 7.9A and 4.5V Vgs. It operates within a wide temperature range of -55°C to 175°C.
Packaged in a compact SOT-23-3 (TO-236) surface-mount package, the SQ2318AES-T1_GE3 is suitable for space-constrained designs. Its TrenchFET technology and AEC-Q101 qualification make it ideal for automotive and industrial applications requiring reliable power switching.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate charge of 13nC maximum. The device also offers a maximum power dissipation of 3W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V minimum at VGS=0V and ID=250µA.
The continuous drain current is 8A maximum at TC=25°C and 4.6A maximum at TC=125°C.
The on-resistance is 31mΩ maximum at VGS=10V and ID=7.9A, and 36mΩ maximum at VGS=4.5V and ID=7.9A.
The gate-source threshold voltage is between 1.5V and 2.5V, with a typical value of 2V, at VDS=VGS and ID=250µA.
The device comes in a SOT-23-3 surface-mount package, also designated as TO-236-3, SC-59, SOT-23-3.
The operating junction and storage temperature range is from -55°C to +175°C.
The maximum power dissipation is 3W at TC=25°C, and 1W at TC=125°C.