| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,737 pcs
|
4737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ2318AES-T1_BE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 8A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 31mOhm at 7.9A and 10V, an input capacitance (Ciss) of 553pF at 20V, and a gate charge (Qg) of 13nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The device operates within a temperature range of -55°C to 175°C (TJ).
This MOSFET is housed in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact designs. The maximum power dissipation is rated at 3W (Tc). Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified by documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
It comes in a SOT-23-3 package, also known as TO-236-3 or SC-59.
The junction temperature range is -55°C to 175°C.
The maximum on-resistance is 31mOhm at a gate-to-source voltage of 10V and drain current of 7.9A.
The maximum gate threshold voltage is 2.5V at a drain current of 250µA.
The maximum gate charge is 13nC at a gate voltage of 10V.
The maximum input capacitance is 553pF at a drain-source voltage of 20V.