| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,486 pcs
|
1486 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
998 pcs
|
998 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Gate Charge | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Style | |
| Package / Case | |
| SVHC Present | |
| Tape & Reel |
The Vishay SQ2315ES-T1_GE3 is a P-Channel TrenchFET power MOSFET designed for automotive applications, meeting AEC-Q101 qualification standards. It operates with a drain-source voltage (VDS) of -12V and can handle a continuous drain current (ID) of -5A at 25°C, reducing to -3A at 125°C. The MOSFET exhibits low on-resistance, with a typical value of 0.050 Ω at VGS = -4.5V.
This device is housed in a compact SOT-23 package, suitable for surface-mount (SMD/SMT) applications. It features a wide operating junction and storage temperature range from -55°C to +175°C, making it robust for demanding environments. The MOSFET is also 100% Rg and UIS tested, ensuring reliability and performance.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) between -0.45V and -1V, and a gate-source leakage current (IGSS) of ±100 nA. The maximum power dissipation is 2W at 25°C. The SQ2315ES-T1_GE3 is lead-free and halogen-free, aligning with environmental compliance standards.
-12 V
0.05 Ω
-5 A
-55 to +175 °C
SOT-23
Yes