SQ2315ES-T1_GE3 The Vishay Dale SQ2315ES-T1_GE3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 5A. It is housed in a SOT-23-3 package.
Mfr Part #:

SQ2315ES-T1_GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2315ES-T1_GE3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 5A. It is housed in a SOT-23-3 package.
✓ Total Stock: 29,574 pcs
$ Price Range: $2.56

SQ2315ES-T1_GE3 Available from 4 distributors

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27,000 pcs
27000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
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1,319 pcs
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255 pcs
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SQ2315ES-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2315ES-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ2315ES-T1_GE3 is an automotive-qualified P-Channel MOSFET designed for power applications. It features a drain-source breakdown voltage of -12V and a continuous drain current of -5A at 25°C.

 

Key electrical characteristics include a maximum on-resistance of 50mOhm at 3.5A and 10V Vgs, and a gate charge of 13nC at 4.5V Vgs. The device operates over a wide temperature range from -55°C to 175°C.

 

This MOSFET utilizes TrenchFET technology and is AEC-Q101 qualified, making it suitable for demanding automotive environments. It is supplied in a compact SOT-23-3 surface-mount package, facilitating integration into space-constrained designs.

SQ2315ES-T1_GE3 Quick Information

Product Type: MOSFET
Series: Sq
Canonical Name: Vishay Dale SQ2315ES-T1_GE3 P-Channel 12V MOSFET
Subcategory: P-Channel

SQ2315ES-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ2315ES-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2315ES-T1_GE3 Features

  • P-Channel 12V MOSFET
  • Continuous drain current of 5A
  • Low on-resistance of 50mOhm
  • AEC-Q101 qualified
  • SOT-23-3 surface mount package

SQ2315ES-T1_GE3 Applications

  • High-side load switching in automotive modules.
  • Battery protection circuits for portable devices.
  • Power management in automotive infotainment systems.
  • Load switch for LED lighting applications.

SQ2315ES-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is -12 V.

What is the gate-source threshold voltage?

The gate-source threshold voltage is -1 V maximum.

What is the maximum continuous drain current?

The maximum continuous drain current is -5 A at 25°C.

What is the maximum power dissipation?

The maximum power dissipation is 2 W at 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What is the on-resistance at VGS = -4.5V?

The on-resistance at VGS = -4.5V is 0.05 Ohm.

What is the package type?

The package type is SOT-23-3.

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