SQ2315ES-T1_BE3 The Vishay Dale SQ2315ES-T1_BE3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 5A. It is supplied in a SOT-23-3 package.
Mfr Part #:

SQ2315ES-T1_BE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ2315ES-T1_BE3 is a P-Channel MOSFET with a 12V drain-source voltage and a continuous drain current of 5A. It is supplied in a SOT-23-3 package.
✓ Total Stock: 437 pcs
$ Price Range: $2.56

SQ2315ES-T1_BE3 Available from 1 distributor

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✓ Non-Authorised
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SQ2315ES-T1_BE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ2315ES-T1_BE3 Description

Short technical summary and product information.

This Vishay Dale SQ2315ES-T1_BE3 is a P-Channel MOSFET designed for surface mount applications. It features a drain-to-source voltage (Vdss) of 12V and can handle a continuous drain current of 5A. The MOSFET has a maximum on-resistance (Rds On) of 50mOhm when tested at 3.5A and 4.5V gate-source voltage.

 

With an operating temperature range of -55°C to 175°C (TJ) and a maximum power dissipation of 2W (Tc), this component is suitable for various thermal conditions. The input capacitance (Ciss) is 870pF at 6V, and the gate charge (Qg) is 13nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.

 

The device is packaged in a TO-236-3, SC-59, SOT-23-3 configuration, designed for surface mounting. It operates with a maximum gate voltage of ±8V and requires drive voltages between 1.8V and 4.5V for optimal performance. The MOSFET technology is Metal Oxide.

 

This component is classified under Transistors - FETs, MOSFETs - Single and is a P-Channel type. It is suitable for applications requiring efficient switching and power management within its specified electrical and thermal limits.

SQ2315ES-T1_BE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQ2315ES-T1_BE3 P-Channel MOSFET
Subcategory: P-Channel

SQ2315ES-T1_BE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ2315ES-T1_BE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2315ES-T1_BE3 Features

  • P-Channel MOSFET technology.
  • 12V drain-source voltage rating.
  • 5A continuous drain current.
  • 50mOhm maximum Rds On.
  • Surface mount SOT-23-3 package.

SQ2315ES-T1_BE3 Applications

  • Load switch for portable electronics.
  • Battery protection in handheld devices.
  • Power management for low-voltage systems.
  • High-side load switching in IoT devices.

SQ2315ES-T1_BE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the SQ2315ES-T1_BE3?

The maximum drain to source voltage is 12V.

What is the continuous drain current rating?

The continuous drain current rating is 5A.

What is the maximum on-resistance?

The maximum on-resistance is 50mOhm at a gate drive of 4.5V and a drain current of 3.5A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the SQ2315ES-T1_BE3 available in?

It is available in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at a drain current of 250µA.

What is the maximum gate charge?

The maximum gate charge is 13nC at a gate voltage of 4.5V.

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