Mfr Part #:

SQ2309ES-T1_GE3

Mfr Name: Vishay

SQ2309ES-T1_GE3 is a P-Channel MOSFET from Vishay Dale with a -60V drain-source breakdown voltage and 1.7A drain current.

✓ Total Stock: 213,660 pcs

$ Price Range: $2.56

SQ2309ES-T1_GE3 Available from 5 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	190,316 pcs On Request	190316 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	14,583 pcs On Request	14583 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	4,200 pcs On Request	4200 pcs	On Request	1	On Request	On Request	18+22+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,597 pcs On Request	2597 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,964 pcs On Request	1964 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQ2309ES-T1_GE3 Description

Short technical summary and product information.

The SQ2309ES-T1_GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a minimum drain-source breakdown voltage of -60 V and a maximum gate-source threshold voltage of -2.5 V. The device is rated for a maximum gate-source voltage of ±20 V.

This MOSFET is designed for general-purpose switching and power management applications. The part is housed in a TO-236 (SOT-23) surface-mount package, suitable for automated assembly processes.

Key electrical characteristics include a drain-source breakdown voltage of -60 V and a gate-source threshold voltage of -2.5 V maximum. The device is a P-Channel MOSFET, making it suitable for high-side switching and load control in low-voltage circuits.

SQ2309ES-T1_GE3 Quick Information

Product Type: P-Channel MOSFET

Canonical Name: SQ2309ES-T1_GE3 P-Channel MOSFET

Subcategory: Single MOSFETs

SQ2309ES-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

SQ2309ES-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2309ES-T1_GE3 Features

P-Channel enhancement-mode MOSFET design.
Minimum -60V drain-source breakdown voltage.
Maximum gate-source threshold voltage -2.5V.
Rated for ±20V gate-source voltage.
Surface-mount TO-236 (SOT-23) package.

SQ2309ES-T1_GE3 Applications

Used in high-side load switching circuits.
Suitable for power management in portable devices.
Ideal for DC-DC converter applications.
Used in battery protection and charging circuits.

SQ2309ES-T1_GE3 FAQs

3 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the SQ2309ES-T1_GE3?

The minimum drain-source breakdown voltage is -60 V.

What is the maximum gate-source voltage for this MOSFET?

The maximum gate-source voltage is ±20 V.

What is the gate-source threshold voltage of the SQ2309ES-T1_GE3?

The maximum gate-source threshold voltage is -2.5 V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.7A (Tc)
Drain to Source Voltage (Vdss)	-60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	265 pF @ 25 V
Lead Style	Smd
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	2W (Tc)
Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.5V @ 250µA