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SQ2308CES-T1_GE3 N-Channel MOSFET with 60V drain-source breakdown voltage and 2.3A continuous drain current. Suitable for switching applications.
Mfr Part #:

SQ2308CES-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 60V drain-source breakdown voltage and 2.3A continuous drain current. Suitable for switching applications.
✓ Total Stock: 39,860 pcs
$ Price Range: $2.56

SQ2308CES-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SQ2308CES-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SQ2308CES-T1_GE3 Description

Short technical summary and product information.

The SQ2308CES-T1_GE3 is an N-Channel Enhancement Mode MOSFET from Vishay, designed for low voltage switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 2.3A at 25°C. The device offers low on-resistance of 150mOhm typical at VGS=10V and 164mOhm at VGS=4.5V, ensuring efficient power handling. The gate threshold voltage ranges from 1.5V to 2.5V, making it compatible with logic-level drive signals. The MOSFET is housed in a compact SOT-23 surface mount package, suitable for space-constrained designs. It is ideal for load switching, power management, and DC-DC converter circuits in consumer and industrial applications. The gate-source leakage is limited to ±100nA, and the zero gate voltage drain current is 1μA, indicating low off-state power loss.

SQ2308CES-T1_GE3 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: SQ2308CES-T1_GE3 N-Channel MOSFET
Subcategory: Single MOSFET

SQ2308CES-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ2308CES-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2308CES-T1_GE3 Features

  • 60V drain-source breakdown voltage.
  • 2.3A continuous drain current at 25°C.
  • Low on-resistance: 150mOhm at 10V.
  • Logic-level gate threshold voltage.
  • SOT-23 surface mount package.

SQ2308CES-T1_GE3 Applications

  • Ideal for load switching circuits.
  • Used in power management systems.
  • Suitable for DC-DC converter designs.
  • Works in low voltage motor control.

SQ2308CES-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQ2308CES-T1_GE3?

60V minimum.

What is the gate threshold voltage range?

1.5V minimum to 2.5V maximum, typical 2V.

What is the on-resistance at VGS=10V?

150mOhm maximum.

What is the continuous drain current rating?

2.3A at 25°C case temperature, derated to 1.3A at 125°C.

What is the maximum gate-source leakage current?

±100nA maximum.

SQ2308CES-T1_GE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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MOSFET N-CH 60V 2.3A SOT23-3
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