Mfr Part #:

SQ2301ES-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQ2301ES-T1_GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 3.9A. It is housed in a TO-236 (SOT-23) package.

✓ Total Stock: 313,222 pcs

$ Price Range: $2.56

SQ2301ES-T1_GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	200,000 pcs On Request	200000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	112,020 pcs On Request	112020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,202 pcs On Request	1202 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

SQ2301ES-T1_GE3 Description

Short technical summary and product information.

This Vishay Dale SQ2301ES-T1_GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 3.9A at 25°C. The on-resistance (RDS(on)) is specified at a maximum of 120mΩ when driven at 4.5V gate-source voltage and 2.8A drain current.

The MOSFET operates within a wide temperature range of -55°C to 175°C. It is packaged in a compact TO-236 (SOT-23) surface-mount package, making it suitable for space-constrained designs. The device also offers a gate-source voltage (VGS) range of ±8V and a gate threshold voltage (VGS(th)) of up to 1.5V.

Key electrical characteristics include an input capacitance (Ciss) of 425pF and a gate charge (Qg) of 8nC. The device is AEC-Q101 qualified, indicating its suitability for automotive applications. It is also RoHS3 compliant and halogen-free.

With its robust specifications and automotive qualification, the SQ2301ES-T1_GE3 is a reliable choice for power management and switching applications requiring a P-Channel MOSFET in a small form factor.

SQ2301ES-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQ2301ES-T1_GE3 P-Channel 20V MOSFET

Subcategory: P-Channel

SQ2301ES-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead (Pb)-free

SQ2301ES-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ2301ES-T1_GE3 Features

P-Channel MOSFET with 20V VDS rating.
3.9A continuous drain current capability.
Low 120mΩ on-resistance at 4.5V.
Compact TO-236 (SOT-23) package.
AEC-Q101 qualified for automotive use.

SQ2301ES-T1_GE3 Applications

Suitable for power switching circuits.
Ideal for battery management systems.
Used in automotive electronic control units.
Applicable for load switch functions.

SQ2301ES-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage for the SQ2301ES-T1_GE3?

-20 V

What is the maximum continuous drain current for this MOSFET?

-3.9 A

What is the on-resistance of the SQ2301ES-T1_GE3 at VGS = -4.5V?

120 mΩ

What is the operating temperature range for this Vishay Dale MOSFET?

-55°C to 175°C

What package type is the SQ2301ES-T1_GE3 supplied in?

TO-236 (SOT-23)

Is the SQ2301ES-T1_GE3 RoHS compliant?

RoHS3 Compliant

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	-3.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Halogen Free	Halogen-free
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	120 mΩ
Supplier Device Package	TO-236 (SOT-23)
Supplier Package	TO-236 (SOT-23)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	-0.45 V / -1.5 V