| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ1912AEEH-T1_GE3 is a dual N-channel MOSFET with a TrenchFET power MOSFET technology. It is AEC-Q101 qualified and 100% R_g tested, offering typical ESD protection of 800V.
This MOSFET has a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 800mA at 25°C. The Rds On is specified at a maximum of 280mOhm at 1.2A and 4.5V Vgs. It also features a gate charge (Qg) of 1.25nC at 4.5V Vgs and a gate-source threshold voltage (Vgs(th)) of 1.5V maximum at 250µA Id.
With a maximum power dissipation of 1.5W at 25°C, this device operates within a junction and storage temperature range of -55°C to 175°C. The thermal resistance from junction to ambient (RthJA) is 220°C/W when mounted on a 1" square PCB (FR4 material), and junction-to-foot (drain) is 100°C/W.
The SQ1912AEEH-T1_GE3 comes in a compact SC-70-6 (SOT-363) surface mount package, making it suitable for space-constrained applications. It is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
0.8A at 25°C case temperature.
-55°C to 175°C.
SC-70-6 surface-mount.
Dual N-channel (2 N-Channel).
280mOhm at Vgs=4.5V, Id=1.2A.
Yes, typical 800V.