SQ1563AEH-T1_GE3 The Vishay Dale SQ1563AEH-T1_GE3 is an N- and P-channel MOSFET array designed for surface mounting. It offers a 20V drain-source voltage and 850mA continuous drain current.
Mfr Part #:

SQ1563AEH-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ1563AEH-T1_GE3 is an N- and P-channel MOSFET array designed for surface mounting. It offers a 20V drain-source voltage and 850mA continuous drain current.
✓ Total Stock: 3,000 pcs
$ Price Range: $1.64

SQ1563AEH-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

SQ1563AEH-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SQ1563AEH-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ1563AEH-T1_GE3 is a TrenchFET® power MOSFET featuring both N-channel and P-channel configurations. It is designed for 20V applications and operates across a wide temperature range of -55°C to 175°C.

 

Key electrical characteristics include a maximum drain-source breakdown voltage of 20V and a continuous drain current of 850mA at 25°C. The on-state resistance (RDS(on)) is as low as 280mOhm at 850mA and 4.5V VGS for the N-channel, and 575mOhm at 800mA and 4.5V VGS for the P-channel. Gate charge is typically 1.25nC and input capacitance is 89pF.

 

This MOSFET array is housed in a PowerPAK® SC-70-6 Dual package, suitable for surface mounting. It is AEC-Q101 qualified, indicating suitability for automotive applications. The device is tested for 100% Rg and UIS, ensuring reliability.

 

Absolute maximum ratings include a continuous drain current of 0.85A and a pulsed drain current of 3.3A. Maximum power dissipation is 1.5W at 25°C, derating to 0.5W at 125°C. Thermal resistance is 220°C/W junction-to-ambient.

SQ1563AEH-T1_GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SQ1563AEH-T1_GE3 N- and P-Channel MOSFET
Subcategory: N- and P-Channel

SQ1563AEH-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ1563AEH-T1_GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ1563AEH-T1_GE3 Features

  • N- and P-channel MOSFET array.
  • 20V drain-source voltage rating.
  • 850mA continuous drain current.
  • Low Rds On resistance.
  • AEC-Q101 qualified.

SQ1563AEH-T1_GE3 Applications

  • Automotive applications.
  • Power management circuits.
  • Switching applications.
  • Complementary MOSFET needs.

SQ1563AEH-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the SQ1563AEH-T1_GE3?

The drain-source voltage is 20V and the gate-source voltage is ±8V.

What package is the SQ1563AEH-T1_GE3 available in?

It is available in a surface-mount PowerPAK SC-70-6 Dual package.

What is the operating temperature range of the SQ1563AEH-T1_GE3?

The operating junction and storage temperature range is -55°C to 175°C.

What is the continuous drain current of the SQ1563AEH-T1_GE3?

The continuous drain current is 0.85A at TC = 25°C and 0.79A at TC = 125°C.

What is the on-resistance of the SQ1563AEH-T1_GE3?

The maximum drain-source on-state resistance is 280mOhm at VGS = 4.5V.

Home
Account

Categories