| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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64,020 pcs
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64020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SQ1539EH-T1_GE3 is a TrenchFET® power MOSFET featuring both N-channel and P-channel transistors in a single package. It is AEC-Q101 qualified and 100% R_g and UIS tested.
This MOSFET array offers a Drain-Source Voltage (Vds) of 30V. The N-channel configuration has an Rds On of 280mOhm at 1A and 10V Vgs, while the P-channel has an Rds On of 940mOhm at 500mA and 10V Vgs. The continuous drain current is rated at 850mA (Tc).
Designed for surface mounting, the SQ1539EH-T1_GE3 utilizes a PowerPAK® SC-70-6 Dual package. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for applications requiring integrated N- and P-channel MOSFETs in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V for both N-channel and P-channel MOSFETs.
The continuous drain current is 0.85A at 25°C for the N-channel and -0.56A at 125°C for the P-channel.
The device is packaged in a PowerPAK SC-70-6 Dual surface-mount package.
The operating junction and storage temperature range is -55°C to 175°C.
The typical gate-source threshold voltage is 1.8V for the N-channel and -1.8V for the P-channel.
The maximum on-state resistance is 0.28 Ohm for the N-channel at Vgs=10V, Id=1A, and 0.94 Ohm for the P-channel at Vgs=-10V, Id=500mA.