SQ1464EEH-T1_GE3 N-Channel MOSFET rated at 60V drain-source voltage and 440mA continuous drain current. Offered in a compact SC-70-6 surface-mount package.
Mfr Part #:

SQ1464EEH-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET rated at 60V drain-source voltage and 440mA continuous drain current. Offered in a compact SC-70-6 surface-mount package.
✓ Total Stock: 662 pcs
$ Price Range: $2.56

SQ1464EEH-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
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662 pcs
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SQ1464EEH-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQ1464EEH-T1_GE3 Description

Short technical summary and product information.

The SQ1464EEH-T1_GE3 is an N-channel MOSFET from Vishay Dale designed for low-power switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 440mA at 25°C. The device also supports pulsed drain current up to 1.7A and a maximum power dissipation of 0.43W at 25°C.

 

The MOSFET offers a typical on-state resistance of 1.41Ω at a gate-source voltage of 1.5V and a drain current of 2A. Its gate-source threshold voltage ranges from 0.45V to 1V, enabling low-voltage gate drive. The device is housed in an SC-70-6 (SOT-363) surface-mount package, suitable for space-constrained PCB designs.

 

With an operating junction temperature range of -55°C to 175°C and a junction-to-ambient thermal resistance of 460°C/W on a PCB mount, this MOSFET is well suited for portable electronics, load switching, and other low-current applications.

SQ1464EEH-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 60V, 440mA, SC-70-6
Subcategory: FETs, MOSFETs - Single

SQ1464EEH-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQ1464EEH-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ1464EEH-T1_GE3 Features

  • 60V drain-source breakdown voltage.
  • 440mA continuous drain current rating.
  • Low typical on-state resistance of 1.41Ω.
  • Wide operating temperature range -55°C to 175°C.
  • Compact SC-70-6 surface-mount package.

SQ1464EEH-T1_GE3 Applications

  • Low-side load switching in portable devices.
  • Signal switching in battery-operated equipment.
  • Power management in compact electronic modules.
  • Gate drive for other power transistors.

SQ1464EEH-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of SQ1464EEH-T1_GE3?

The package is SC-70-6, also known as SOT-363.

What is the maximum drain-source voltage?

The drain-source breakdown voltage is 60V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the continuous drain current rating?

The continuous drain current is 440mA at TC=25°C.

What is the typical on-state resistance?

The typical on-state resistance is 1.41Ω at VGS=1.5V and ID=2A.

What is the gate-source threshold voltage?

The gate-source threshold voltage ranges from 0.45V to 1V, with a typical value of 0.6V.

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