| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,700 pcs
|
1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ1431EH-T1_GE3 is a P-Channel TrenchFET® power MOSFET designed for automotive applications, qualified to AEC-Q101 standards. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 175mOhm at 2A and 10V Vgs, and 300mOhm at Vgs = -4.5V. The gate-source voltage (Vgs) is rated at ±20V, with a threshold voltage (Vgs(th)) of -1V to -2V at 250µA. Input capacitance (Ciss) is 205pF at 25V, and gate charge (Qg) is 6.5nC at 4.5V.
This MOSFET operates over a wide temperature range from -55°C to 175°C. It is packaged in a compact SC-70-6 (SOT-363) surface mount package. The maximum power dissipation is 3W at 25°C, with a junction-to-ambient thermal resistance of 130°C/W when mounted on a 1" square PCB. It is 100% Rg and UIS tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is -30 V.
The device is available in a surface-mount SC-70-6 package (also specified as 6-TSSOP, SC-88, SOT-363).
The operating junction and storage temperature range is -55°C to 175°C.
The continuous drain current is -3 A at TC = 25 °C and -1.8 A at TC = 125 °C.
The gate threshold voltage ranges from -1 V to -2 V, with a typical value of -1.5 V at VDS = VGS, ID = -250 μA.
The maximum on-resistance is 175 mΩ at VGS = 10 V and 300 mΩ at VGS = -4.5 V.