| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ1421EDH-T1_GE3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 1.6A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 290mOhm at 2A and 10V, an input capacitance (Ciss) of 355pF at 25V, and a gate charge (Qg) of 5.4nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in a compact SC-70-6 package, suitable for surface mounting. The device is classified under MOSFET technology and is RoHS3 compliant.
With its specifications, the SQ1421EDH-T1_GE3 is suitable for applications requiring efficient switching and power management in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
SC-70-6
-55°C to 175°C (junction)
1.6A at case temperature Tc
290mOhm maximum at Vgs=10V, Id=2A
2.5V maximum at Id=250µA
355pF at Vds=25V