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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -100 µAdc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 100 µAdc, IC = 0) | |
| Capacitance | |
| Current | |
| Current Gain (Minimum @ IC = 10 mAdc, VCE = 10 Vdc) | |
| Current Gain (Minimum @ IC = 30 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction Temperature | |
| Lead Spacing | |
| Lead Style | |
| Leakage Current (Maximum @ VBE = 6.0 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VCB = 200 Vdc, IE = 0) | |
| Mounting Type | |
| Pb-Free | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Maximum @ open collector) | |
| voltage (Maximum @ open emitter) |
The SPZTA42T1G is a surface-mount NPN silicon transistor designed for high voltage applications. It offers a maximum collector-emitter voltage of 300V and a continuous collector current of 500mA, with a power dissipation of 1.5W at 25°C.
This transistor has a DC current gain (hFE) of at least 40 at 30mA and 10V. Its current-gain bandwidth product (fT) is 50MHz at 10mA and 20V. The device is housed in a SOT-223 (TO-261) package, suitable for surface mounting.
Key electrical characteristics include a collector-base breakdown voltage of 300V and an emitter-base breakdown voltage of 6.0V. The junction temperature is rated up to 150°C, with a storage temperature range of -65°C to +150°C. The thermal resistance from junction to ambient is 83.3°C/W.
The SPZTA42T1G is Pb-free and halogen-free, compliant with RoHS standards. It is a complement to the PZTA92T1G transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (open base) for the SPZTA42T1G is 300 Vdc.
The SPZTA42T1G can handle a continuous collector current of 500 mAdc.
The total power dissipation for the SPZTA42T1G at 25°C is 1.5 W.
The SPZTA42T1G is available in a SOT-223 (TO-261) surface mount package.
Yes, the SPZTA42T1G is RoHS3 compliant.
The minimum DC current gain (hFE) for the SPZTA42T1G is 40 at 30mA collector current and 10V collector-emitter voltage.
The current-gain bandwidth product (fT) of the SPZTA42T1G is 50 MHz at 10mA collector current and 20V collector-emitter voltage.