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SPZT751T1G The SPZT751T1G is a PNP Silicon Planar Epitaxial Transistor from ON Semiconductor designed for industrial and consumer applications. It features a high current capability and is housed in a SOT-223 package.
Mfr Part #:

SPZT751T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SPZT751T1G is a PNP Silicon Planar Epitaxial Transistor from ON Semiconductor designed for industrial and consumer applications. It features a high current capability and is housed in a SOT-223 package.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.37

SPZT751T1G Available from 2 distributors

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✓ Non-Authorised
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Braun Electronic Components ✓
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1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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SPZT751T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SPZT751T1G Description

Short technical summary and product information.

The SPZT751T1G is a PNP Silicon Planar Epitaxial Transistor manufactured by ON Semiconductor. This device is designed for use in industrial and consumer applications, offering a high current capability.

 

Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -60 Vdc, a Collector Current (IC) of -2.0 Adc, and a DC Current Gain (hFE) of 75 at 1A and 2V. The Vce Saturation is a maximum of 500mV at 200mA and 2A, with a frequency response up to 75MHz.

 

The transistor is housed in a SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package ensures level mounting for improved thermal conduction and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die.

 

This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The operating junction temperature is up to 150°C, with a total power dissipation of 0.8W at 25°C. The thermal resistance from junction to ambient in free air is 156 °C/W.

SPZT751T1G Quick Information

Product Type: PNP Silicon Planar Epitaxial Transistor
Canonical Name: SPZT751T1G PNP Silicon Planar Epitaxial Transistor
Subcategory: Bipolar (BJT) - Single

SPZT751T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SPZT751T1G Estimated Pricing

Qty Low High
1+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

SPZT751T1G Features

  • High current PNP silicon transistor.
  • Designed for industrial and consumer applications.
  • Surface mount SOT-223 package.
  • 60V Collector-Emitter Voltage.
  • 2A continuous collector current.

SPZT751T1G Applications

  • General purpose switching circuits.
  • Medium power amplification stages.
  • Load driver applications up to 2A.
  • Surface mount PCB assembly designs.

SPZT751T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Collector-Emitter Voltage (VCEO) for the SPZT751T1G?

-60 Vdc

What is the maximum continuous Collector Current (IC) for this transistor?

-2.0 Adc

What is the package type for the SPZT751T1G?

SOT-223 (TO-261)

What is the operating temperature range for the SPZT751T1G?

-65 to 150 °C

Is the SPZT751T1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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